Low Frequency Noise sensitivity to technology induced mechanical stress in MOSFETs
نویسندگان
چکیده
A detailed experimental investigation of 1/f noise in MOSFET devices as a function of technology-induced mechanical stress is presented. Strain in the channel region is obtained by the Shallow Trench Isolation (STI) technique. Both nand p-MOS have been considered inside the present study. An increasing of 1/f noise intensity with the increasing intensity of mechanical stress has been detected for p-channel transistor. A tentative explanation of this experimental finding has been proposed.
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